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Physics of Semiconductor Devices |
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Conductivity of doped siliconSilicon is doped with boron at 700000000000000000 cm-3. What is the conductivity at 300 K? For Si at 300 K, μn = 1500 cm²/Vs, μp = 450 cm²/Vs, and ni = 1.5 × 1010 cm-3. Assume that all of the acceptors are ionized. |