Physics of Semiconductor Devices

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Diode current

A silicon p-n junction diode is doped NA = 8000000000000000 cm-3 and ND = 500000000000000000 cm-3. At the temperature of operation, ni = 1 × 1010 cm-3. The cross-sectional area of the diode is 10-4 cm2. The diffusion constants and recombination times are: Dn = 20 cm2/s, Dp = 10 cm2/s, τn = 7 × 10-7 s, and τp = 5 × 10-7 s.

What is the reverse saturation current of this diode?