Physics of Semiconductor Devices

Carrier drift

Holes are injected into a homogenously doped n-type semiconductor (N_d = 10¹⁶ cm^-3) at 300 K. The minority carriers are observed to move 0.01 m in 100 μs when an electric field of 9011 V/m is applied.

What are the mobility and the diffusion constant of the holes?

Unfortunately, the units commonly used for mobility and diffusion constant are not SI units. You will need to convert to cm²/Vs for the mobility and cm²/s for the diffusion constant.