Physics of Semiconductor Devices

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Carrier drift

Holes are injected into a homogenously doped n-type semiconductor (Nd = 1016 cm-3) at 300 K. The minority carriers are observed to move 0.01 m in 100 μs when an electric field of 6330 V/m is applied.

What are the mobility and the diffusion constant of the holes?

μp = cm²/Vs

Dp = cm²/s

Unfortunately, the units commonly used for mobility and diffusion constant are not SI units. You will need to convert to cm²/Vs for the mobility and cm²/s for the diffusion constant.