Physics of Semiconductor Devices

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Hall effect

A current of 9 mA is passed through a bar of silicon while a magnetic field of 12859 Gauss is applied perpendicular to the current flow. The cross section of the bar is 0.004 cm². Two voltage probes are placed a distance 501 μm apart in a direction perpendicular to both the current flow and the magnetic field. The voltage that is measured is -3 mV.

What is the density of dopants?

dopant density = 1/cm³

1 Tesla = 1 Weber/m² = 10-4 Weber/cm² = 104 Gauss