Physics of Semiconductor Devices

Exam February 24, 2009

In a Haynes-Shockley experiment, an electric field of 100 V/cm is applied in the positive x-direction across an n-doped semiconductor at 300 K. A light pulse generates 10¹⁵/cm² electron-hole pairs at position x = 0 and time t = 0. The voltage measured at x = 100 μm exhibits a peak that is observed to pass by at t = 10 μs. What is the hole mobility in this semiconductor?