Physics of Semiconductor Devices

Haynes Shockley experiment

In a Haynes-Shockley experiment, an electric field of 20 V/cm is applied in the positive x-direction across an n-doped semiconductor at 300 K. A light pulse generates 10¹⁴/cm³ electron-hole pairs at position x = 0 and time t = 0. The voltage measured at x = 100 μm exhibits a peak that is observed to pass by at t = 8 μs. What is the hole mobility in this semiconductor?