Physics of Semiconductor Devices

Return to
problem list

      

p-n junction

A silicon p-n diode has a doping of Nd = 5000000000000000000 cm-3 and Na = 6000000000000000000 cm-3. What are the depletion widths in the n-region, the depletion width in the p-region, and the built-in potential at 300 K? Use the depletion approximation.

For Si: ni = 1.5 × 1010 cm-3, εr = 11.9.

Wn = m

Wp = m

Vbi = V