Physics of Semiconductor Devices

p-n junction

A silicon p-n diode has a doping of N_d = 20000000000000000 cm^-3 and N_a = 4000000000000000000 cm^-3. What are the depletion widths in the n-region, the depletion width in the p-region, and the built-in potential at 300 K? Use the depletion approximation.

For Si: n_i = 1.5 × 10¹⁰ cm^-3, ε_r = 11.9.