Physics of Semiconductor Devices

Return to
problem list

      

Sze problem 4.1

Determine the n-type doping concentration to meet the following specifications for a Si p-n junction:

NA = 9000000000000000000 cm-3, Emax = 800000 V/cm, Reverse bias voltage VR = 27 V, and T = 300 K.

Hint: The formula for the depletion width contains a factor Vbi + VR. Since VR >> Vbi, neglect Vbi.