Physics of Semiconductor Devices

Sze problem 7.1

Calculate the theoretical barrier height and the built-in potential in a metal-semiconductor diode for zero applied bias. Assume the metal work function is 4.76 eV, the electron affinity is 3.07 eV, and N_D = 9.0E+16 cm^-3, N_c = N_v = 10²⁵ m^-3 and E_g = 1 eV at 300 K.

What effect will interface states have on this result?