I-Vg characteristics of a single-electron transistor

The current through a single electron transistor is a periodic function of the gate voltage. The transistor consists of a conducting island coupled to two tunnel junctions and a gate capacitor. The tunnel junctions have capacitances $C_1$, $C_2$ and resistances $R_1$, $R_2$. The gate capacitance is $C_g$ and the offset charge on the island is $Q_0$. Bias voltages of $V_1$ and $V_2$ are applied to the tunnel junctions. The form below can be used to plot the $I-V_g$ characteristics at temperature $T$ from $V_g$(start) to $V_g$ (stop). $N$ is the number of points used in the plot. The equations that are used are described in Günther Lientschnig, Irek Weymann and Peter Hadley, Simulating Hybrid Circuits of Single-Electron Transistors and Field-EffectTransistors, Japanese Journal of Applied Physics 42 pp. 6467-6472 (2003).

$I$ [nA]

$V_g$ [mV]

 

$C_1$ =

F 

$C_2$ =

F

$R_1$ =

$\Omega$

$R_2$ =

$\Omega$

$C_{g}$ =

F

$V_{g}$ (start) =

V

$V_{g}$ (stop) =

V

$Q_0$ =

$e$

$T$ =

K

$V_1$ =

V

$V_2$ =

V

$N$ =

 

 

$V_g$ [V] $I$ [A]