H:
K:
L:
Thickness of slab parallel to HKL plane:
0 Å
10 Å
CIF file
#(C) 2015 by Fachinformationszentrum Karlsruhe. All rights reserved. data_24170-ICSD _database_code_ICSD 24170 _audit_creation_date 1980-01-01 _audit_update_record 2013-02-01 _chemical_name_systematic 'Silicon carbide - alpha III' _chemical_formula_structural 'Si C' _chemical_formula_sum 'C1 Si1' _chemical_name_structure_type SiC(4H) _chemical_name_mineral 'Moissanite 4H' _exptl_crystal_density_diffrn 3.24 _publ_section_title ; Morphological and structural crystallography and optical properties of silicon carbide (Si C) ; loop_ _citation_id _citation_journal_full _citation_year _citation_journal_volume _citation_page_first _citation_page_last _citation_journal_id_ASTM primary 'American Mineralogist' 1944 29 327 362 AMMIAY loop_ _publ_author_name 'Thibault, N.W.' _cell_length_a 3.073 _cell_length_b 3.073 _cell_length_c 10.053 _cell_angle_alpha 90. _cell_angle_beta 90. _cell_angle_gamma 120. _cell_volume 82.22 _cell_formula_units_Z 4 _symmetry_space_group_name_H-M 'P 63 m c' _symmetry_Int_Tables_number 186 loop_ _symmetry_equiv_pos_site_id _symmetry_equiv_pos_as_xyz 1 '-x, -x+y, z+1/2' 2 'x-y, -y, z+1/2' 3 'y, x, z+1/2' 4 'x-y, x, z+1/2' 5 'y, -x+y, z+1/2' 6 '-x, -y, z+1/2' 7 'x, x-y, z' 8 '-x+y, y, z' 9 '-y, -x, z' 10 '-x+y, -x, z' 11 '-y, x-y, z' 12 'x, y, z' loop_ _atom_type_symbol _atom_type_oxidation_number Si4+ 4 C4- -4 loop_ _atom_site_label _atom_site_type_symbol _atom_site_symmetry_multiplicity _atom_site_Wyckoff_symbol _atom_site_fract_x _atom_site_fract_y _atom_site_fract_z _atom_site_B_iso_or_equiv _atom_site_occupancy _atom_site_attached_hydrogens Si1 Si4+ 2 a 0 0 0.188 . 1. 0 Si2 Si4+ 2 b 0.3333 -.3333 0.438 . 1. 0 C1 C4- 2 a 0 0 0 . 1. 0 C2 C4- 2 b 0.3333 -.3333 0.25 . 1. 0 #End of TTdata_24170-ICSD