513.001 Molecular and Solid State Physics

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Maximum field strength

A silicon p-n diode has a doping of Nd = 30000000000000000 cm-3 and Na = 300000000000000000 cm-3. At 300 K the built-in potential is Vbi = 0.80928965397563 V, the depletion width on the n-side is Wn = 1.7955469866811E-7 m, and the depletion width on the p-side is Wp = 1.7955469866811E-8 m.

The relative dielectric constant of silicon is εr = 11.9.

What is the maximum electric field strength in the pn-junction?

|Emax| = V/m