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Physics of Semiconductor Devices |
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Hall effectA current of 9 mA is passed through a bar of silicon while a magnetic field of 11106 Gauss is applied perpendicular to the current flow. The cross section of the bar is 0.007 cm². Two voltage probes are placed a distance 995 μm apart in a direction perpendicular to both the current flow and the magnetic field. The voltage that is measured is 4 mV. 1 Tesla = 1 Weber/m² = 10-4 Weber/cm² = 104 Gauss |