Silicon carbide 4H.
The conventional unit cell is:
\[ \begin{equation} a = 0.3073\, \text{nm}, \, b = 0.3073 \,\text{nm}, \, c = 1.0053 \,\text{nm}, \, \alpha = 90^{\circ} , \,\beta = 90^{\circ} ,\,\gamma = 120^{\circ} . \end{equation} \]Space group: 186 (P 63 m c)
12 symmetry operations:
1 x,y,z identity 2 -x,-x+y,z+1/2 c-glide plane|translation: 0 0 1/2 3 x-y,-y,z+1/2 c-glide plane|translation: 0 0 1/2 4 y,x,z+1/2 c-glide plane|translation: 0 0 1/2 5 x-y,x,z+1/2 6-fold screw axis|translation: 0 0 1/2 6 y,-x+y,z+1/2 6-fold screw axis|translation: 0 0 1/2 7 -x,-y,z+1/2 2-fold screw axis|translation: 0 0 1/2 8 x,x-y,z mirror plane 9 -x+y,y,z mirror plane 10 -y,-x,z mirror plane 11 -x+y,-x,z C3 axis 12 -y,x-y,z C3 axis
SiC 4H is an indirect bandgap semiconductor with a bandgap of 3.3 eV.
Calculated using FHI-aims by Lydia Nemec.