PHT.301 Physics of Semiconductor Devices

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Introduction

Electrons in crystals

Intrinsic Semiconductors

Extrinsic Semiconductors

Transport

pn junctions

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JFETs/MESFETs

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NPN common base configuration

This page calculates the collector current for an npn bipolar transistor in a common base configuration. Traces are plotted for five equally spaced emitter currents \(I_{e\text{ max}}*[0.2,0.4,0.6,0.8,1]\). The details of the calculation are described in the discussion of the minority carrier concentration of an npn bipolar transistor.

 

n-Emitter

\(A_{eb}=\)

cm2

 Minority \(\mu_{pe}=\)

cm2/Vs

\(N_c(300 K)=\)

cm-3

\(N_{de}=\)

cm-3

\(N_v(300 K)=\)

cm-3

\(\tau_{pe}=\)

s

\(E_g=\)

eV 

 

\(\epsilon_r=\)

p-Base

\(I_{e\text{ max}}=\)

A 

Minority \(\mu_{nb}=\)

cm2/Vs

\(V_{c\text{ max}}=\)

V 

\(N_{ab}=\)

cm-3

\(x_1-x_e=\)

μm

\(\tau_{nb}=\)

s

\(x_2-x_1=\)

μm

 

\(x_c-x_2=\)

μm

n-Collector

\(T=\)

K

Minority \(\mu_{pc}=\)

cm2/Vs

\(N_{dc}=\)

cm-3

\(\tau_{pc}=\)

s

\(E_g=\) eV; \(n_i=\) cm-3; \(V_{bi1}=\)  eV; \(V_{bi2}=\)  eV; \(W_1=\)  μm; \(W_2=\)  μm;
\(D_{pe}=\) cm²/s; \(D_{nb}=\) cm²/s; \(D_{pc}=\) cm²/s; \(L_{pe}=\)  μm; \(L_{nb}=\)  μm; \(L_{pc}=\)  μm;


\(I_c\)

\(V_{c}\)