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513.160 Microelectronics and Micromechanics | |
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SiC 4HSilicon carbide 4H. Structural propertiesCrystal structure: SiC 4HBravais lattice: hexagonal Space group: 186 (P 63 m c), Point group: 6mm (C6v) one 6-fold rotation, six mirror planes, no inversion The conventional unit cell is: \[ \begin{equation} a = 0.3073\, \text{nm}, \, b = 0.3073 \,\text{nm}, \, c = 1.0053 \,\text{nm}, \, \alpha = 90^{\circ} , \,\beta = 90^{\circ} ,\,\gamma = 120^{\circ} . \end{equation} \]Space group: 186 (P 63 m c) 1 x,y,z identity 2 -x,-x+y,z+1/2 c-glide plane|translation: 0 0 1/2 3 x-y,-y,z+1/2 c-glide plane|translation: 0 0 1/2 4 y,x,z+1/2 c-glide plane|translation: 0 0 1/2 5 x-y,x,z+1/2 6-fold screw axis|translation: 0 0 1/2 6 y,-x+y,z+1/2 6-fold screw axis|translation: 0 0 1/2 7 -x,-y,z+1/2 2-fold screw axis|translation: 0 0 1/2 8 x,x-y,z mirror plane 9 -x+y,y,z mirror plane 10 -y,-x,z mirror plane 11 -x+y,-x,z C3 axis 12 -y,x-y,z C3 axis Electrical propertiesSiC 4H is an indirect bandgap semiconductor with a bandgap of 3.3 eV.
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