|
| |
MOSFET Measurements
- Measure the body diode between the drain and the body. If the MOSFET only has three leads, the body is shorted to the source so measure the diode between the source and drain. This is a one-sided diode since the drain is much more heavily doped than the body. You can estimate the body doping by measuring the reverse breakdown voltage of the body diode. Set the current limit to a low value (10 - 100 nA) so you don't damage the device.
- Measure the output characteristics $I_{DS}\text{ vs. }V_{DS}$ for different gate voltages.
- Measure the transfer characteristics $I_{DS}\text{ vs. }V_{GS}$ for different drain voltages.
- Short the source and drain together and measure the MOS capacitance between the gate and the source/drain as a function of voltage.
- Measure the Fowler-Nordheim tunneling through the gate oxide. Set the current limit to a low value (10 - 100 nA) so you don't damage the device.
|
