Semiconductor Laboratory

Device Electrical Characteristics

• Diodes
• Abrupt pn junctions in the depletion approximation
• Linearly graded pn junctions in the depletion approximation
• PN Diode Current-Voltage Characteristics
• PN Diode Current-Temperature Characteristics
• PN Diode Voltage-Temperature Characteristics
• Metal-n Schottky or tunnel contacts
• Metal-p Schottky or tunnel contacts
• Tunneling through an arbitrarily shaped potential barrier
• Junction FETs/MESFETs
• n-channel JFET transistor characteristics
• n-JFET Gradual Channel Approximation
• p-channel JFET transistor characteristics
• n-channel MESFET transistor characteristics
• n-MESFET Gradual Channel Approximation
• MOSFETs
• n-channel
• MOS capacitor with a p-type substrate
• Capacitance-Voltage Characteristics of a MOS capacitor with a p-type substrate
• nMOS Gradual Channel Approximation
• p-channel
• Bipolar transistors
• Minority carrier concentration of an npn bipolar transistor
• NPN common base configuration
• NPN common emitter configuration
• IGBT - Insulated Gate Bipolar Transistor
• IGBT device characteristics