PHT.301 Physics of Semiconductor Devices

Outline

• Introduction
• Semiconductors, transistors, and the electronics industry
• Semiconductor crystals
• Energy bands      W
• Crystal structure     W
• Bravais lattice     W
• Miller indices     W
• Examples of crystal structures      W
• silicon, GaN (wurzite), SiC 4H, ZnO (wurzite), diamond, Ga₂O₃
• simple cubic, fcc, bcc, hcp, zincblende
• Wave and particle nature of electrons
• k-space
• Density of states     W Some examples: Al fcc, Au fcc, Cu fcc, Pt fcc, W bcc, Si diamond, Graphene
• Pauli exclusion principle     W
• Fermi function     W
• Fermi energy     W
• Metals, semiconductors, and insulators
• Metal band structure
• Semiconductor band structure
• Absorption and emission of photons
• Direct and indirect band gaps     W
• Intrinsic semiconductors
• Conduction band
• Valence band
• Effective mass     W
• Holes     W
• Boltzmann approximation
• Law of mass action     W
• Fermi energy of an intrinsic semiconductor     EN 2:36 
• Intrinsic semiconductors with a split-off band
• Ohm's law
• Mobility
• Extrinsic semiconductors
• Dopants     W
• Donors
• Acceptors
• Temperature dependence of the electron and hole densities
• Freeze-out
• Extrinsic
• Intrinsic
• Charge neutrality
• Determining E_f from the charge neutrality condition
• Fermi energy of an extrinsic semiconductor
• Temperature dependence of the Fermi energy of an extrinsic semiconductor
• Carrier transport
• Ballistic transport
• Diffusive transport
• Charge carrier mobilities in silicon
• Conductivity in silicon
• Matthiessen's rule
• Hall effect
• Drift and diffusion simulation
• Diffusion     W
• Einstein relation     W
• Generation and recombination
• Continuity equations
• Haynes-Shockley experiment      W
• High field response
• p-n junctions     W
• p-n junctions at zero bias voltage (Fermi energy is the same throughout the device)
• Built-in voltage
• Abrupt junctions in the depletion approximation
• Depletion region     W
• Charge distribution
• Electric field
• Electrostatic potential
• Depletion widths
• A one-dimensional Poisson solver
• Linearly graded junctions
• Capacitance-voltage measurements      W
• Varactor      W
• Solar cell     W
• Light emitting diode     W
• Heterojunctions     W
• p-n diodes under bias
• Forward bias
• Reverse bias
• Diffusion current in a p-n junction
• Long/short diodes
• Long diodes
• Short diodes
• PN diode IV characteristics
• Using a pn-diode as a thermometer
• PN diode current-temperature characteristics at constant voltage
• PN diode voltage-temperature characteristics at constant current
• Zener tunneling, Zener diode     W
• Esaki diode / Tunnel diode
• Avalanche breakdown, avalanche diode     W
• x-ray image of a diode
• Contacts
• Photoelectric effect     W
• Workfunction     W
• Electron affinity
• Schottky barriers     W
• Band diagram of a n-Schottky diode
• Band diagram of a p-Schottky diode
• Schottky diode IV characteristics
• Ohmic contacts     W
• Interface states
• Thermionic emission     W
• Tunnel contacts
• JFETs, MESFETs, MODFETs
• JFETs, MESFETs
• JFET gradual channel approximation
• MESFET gradual channel approximation
• Linear regime
• Pinch-off
• Saturation regime
• Transconductance
• High frequency response
• Transistor characteristics of a n-channel JFET
• Transistor characteristics of a p-channel JFET
• Transistor characteristics of a n-channel MESFET
• Transistor characteristics of a p-channel MESFET
• MODFETs, HEMTs
• MOSFETs     W
• MOS capacitor
• Accumulation - Flat-band Voltage - Depletion - Threshold voltage - Inversion
• MOS Capacitor - Depletion approximation
• MOS Capacitor - Solving the Poisson Equation
• Capacitance-voltage characteristics
• CCD devices     W
• Gradual channel approximation
• Linear regime
• Saturation regime
• Transistor characteristics of a n-channel MOSFET, another n-mosfet curve tracing program
• Transistor characteristics of a p-channel MOSFET
• Cutoff regime
• High frequency response
• Subthreshold current
• Short channel effects     W
• DIBL     W
• MOSFET scaling     W
• Other MOSFET models: BSIM, EKV
• Memories
• SRAM     W
• DRAM     W
• Flash memory     W
• Phase change memory     W
• CMOS     W
• Inverter
• Ring oscillator     W     EN 11:12 
• Emerging technologies
• Current-voltage characteristics of a symmetrically biased single-electron transistor
• Current-voltage characteristics of an asymmetrically biased single-electron transistor
• Current-gate voltage characteristics of a single-electron transistor
• Bipolar transistors
• Bipolar junction transistor
• Emitter injection efficiency γ_e, base transport factor B, collector efficiency γ_c
• Current transfer ratio, α, current amplification factor β
• Ebers - Moll model
• Common base configuration
• Common emitter configuration
• Minority carrier concentration of an npn bipolar transistor
• NPN common base configuration
• NPN common emitter configuration (including the Early effect)
• Transconductance
• Early effect     W
• Heterojunctions     W
• Heterojunction bipolar transistor HBT     W
• BiCMOS     W
• Thyristor     W
• Insulated Gate Bipolar Transistor (IGBT)
• Latch-up     W
• Optoelectronics
• Photodetectors
• Optical fibers     W
• Total internal reflection     W
• Light emitting diodes
• Laser diode
• Spontaneous emission     W
• Stimulated emission     W
• Optical cavity
• Threshold current
• Quantum cascade lasers
• Solar cells